• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Disclosed is a one-shot gate drive circuit using a sensepet that can arbitrarily adjust the reverse recovery time by allowing a current to flow through a sensepet without going through a diode in reverse recovery of a diode in a voltage-type pseudoresonant converter. In the voltage-type pseudoresonant converter, the secondary side provides a one shot gate drive circuit having a sensepet, a sense resistor, a comparator and a one shot circuit. The sensepet senses a zero voltage point between the drain and the source by using a sensing terminal. The sense resistor keeps the voltage at the sense terminal of the sensepet. The comparator drives the one shot circuit by comparing the voltage of the sense terminal of the sense pet with the ground voltage. The one shot circuit adjusts the turn on time of the sensepet. The comparator causes a current to flow through the sensepet by the one shot circuit during the reverse recovery period of the diode after sensing the zero voltage point. A bias is applied to the sensing terminal of the sense pet to sense the zero voltage point between the drain and the source by changing the voltage of the sensing terminal. Therefore, as in the present invention, when the current is allowed to flow through the diode without the diode during reverse recovery, the reverse recovery time can be arbitrarily adjusted and the switching loss generated during the reverse recovery time can be greatly reduced. .
    公开号:KR19990031563A
    申请号:KR1019970052344
    申请日:1997-10-13
    公开日:1999-05-06
    发明作者:최형묵
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    One Shot Gate Drive Circuit Using Sensepet
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a one shot gate drive circuit using a sensepet.
    The sense FET refers to a MOSFET in which a part of a source area of a MOSFET is separated to be another sense terminal. If the sense terminal voltage of the sensepet is kept sufficiently smaller than the gate-source voltage or the drain-source voltage at turn-on, the sense terminal current at turn-on flows in proportion to the drain current. In general, the sense terminal current flows very small compared to the drain current, which makes it easy to sense the current.
    In general, in order to sense current, there is a burden of attaching a sensing resistor to the outside of an integrated integrated circuit (hereinafter referred to as "IC") or using a process in which an IC process withstands high voltage. Therefore, if there is a circuit that can detect the zero voltage point of the drain-source voltage which is high voltage with the low withstand voltage resistance on the control IC, it can be very useful.
    Voltage Mode Quasi Resonant Converter is a converter which operates at the boundary between current continuous and discontinuous mode and turns on the switch when the voltage of both ends of the primary switch reaches the lowest point, resulting in switching loss and dv / dt. It is possible to suppress the occurrence of electromagnetic interference (EMI). This advantage is being used as a power supply for display devices such as C-TV.
    After the diode on the secondary side is offAs time passes, the voltage across the switch reaches its lowest level. By the way, the minimum value of the voltage of the switch is influenced by the input voltage and the current flowing through the inductor on the primary side at the moment when the diode on the secondary side is turned off. The initial value of the current flowing through the inductor of the primary side is mainly influenced by the reverse recovery characteristic (reverse recovery time) of the diode of the secondary side. The longer the reverse recovery time, the more current flows and the lower the voltage of the switch. However, there is a problem in that the switching loss generated when the reverse recovery time of the diode of the secondary side becomes long.
    Accordingly, an object of the present invention is a one-shot gate drive using a sensepet capable of arbitrarily adjusting the reverse recovery time by allowing a current to flow using a sensepet without passing through the diode in reverse voltage recovery of the diode in a voltage-type pseudo resonance converter. In providing a circuit.
    1 is a circuit diagram of a one-shot gate drive circuit using a sensepet according to the present invention.
    2 shows a zero voltage sensing circuit using a sensepet.
    3A to 3B are equivalent circuit diagrams for respective operation modes illustrating sense terminal voltages according to gate voltages using equivalent circuits of the sensepets.
    4A to 4C are circuit diagrams and graphs illustrating the operation in the case of applying the one-shot gate drive circuit using the sensepet of the present invention to the voltage-type pseudo-resonant converter for each mode.
    The present invention for achieving the above object, in the voltage-type pseudo-resonance converter,
    The secondary side provides a one shot gate drive circuit having a sensepet, a sense resistor, a comparator and a one shot circuit.
    The sensepet senses a zero voltage point between the drain and the source by using a sensing terminal.
    The sense resistor keeps the voltage at the sense terminal of the sensepet.
    The comparator drives the one shot circuit by comparing the voltage of the sense terminal of the sense pet with the ground voltage.
    The one shot circuit adjusts the turn on time of the sensepet.
    The comparator causes a current to flow through the sensepet by the one shot circuit during the reverse recovery period of the diode after sensing the zero voltage point.
    A bias is applied to the sensing terminal of the sense pet to sense the zero voltage point between the drain and the source by changing the voltage of the sensing terminal.
    The voltage-type pseudo-resonant converter increases the initial current value of the primary side inductor at turn-on so as to further lower the minimum value of the primary-side switch at turn-on.
    Therefore, as in the present invention, when the current is allowed to flow through the diode without the diode during reverse recovery, the reverse recovery time can be arbitrarily adjusted and the switching loss generated during the reverse recovery time can be greatly reduced. There is an advantage.
    Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    1 is a circuit diagram of a one-shot gate drive circuit using a sensepet according to the present invention. Referring to FIG. 1, in the one-shot gate drive circuit using the sensepet of the present invention, the primary side includes a power supply 101, a gate drive 102, a transistor 103, a diode 104, and a capacitor 105. And an inductor 106, and the secondary side includes a transformer inductor 107, a sensepet 108, a sense resistor 109, a comparator 110, a one shot circuit 111, A body diode 113, a capacitor 113, and a resistor 114 are provided.
    FIG. 1 illustrates a circuit using a sensepet, a sense resistor, a comparator, and a one shot circuit instead of a diode at a rectifier stage on a secondary side which is generally used. The sense terminal of the sense pet 108 is connected to the ground of the secondary side through the resistor 109, and the voltage of the sense terminal is input to the (+) terminal of the comparator 110. The zero terminal of the comparator 110 is connected to ground to sense a zero voltage point. When the zero voltage point has passed and the body diode 112 of the sensepet starts to recover in reverse, the output of the comparator 110 changes to high and is input to the one shot 111 circuit for a predetermined time. By turning on the sensepet 108 to reduce the loss in switching and at the same time can be turned on. In addition, the initial current value of the primary side inductor was increased at turn-on to further lower the minimum value of the voltage at the turn-on of the primary side switch.
    2 shows a zero voltage sensing circuit using a sensepet. A bias is applied to the sense terminal of the sense pet through a resistor. The resistors R1 and R2 may be replaced with only current sources or current sources and resistors. The sensing area of the sensepet and the remaining area can be viewed as two independent MOSFETs, although there is an error.
    3A to 3B are equivalent circuit diagrams for respective operation modes illustrating sense terminal voltages according to gate voltages using equivalent circuits of the sensepets. The diode in the circuit is a body diode embedded in a typical power MOSFET. The circuit of FIG. 3A is an operating waveform when a gate is applied from a low to a high signal so that a current flows through the sense pet. In this case, the voltage Vsense of the sense terminal is Vsense = Vbias * R1 / (R1 + R2), and the sign thereof becomes (+). In the circuit of FIG. 3B, the gate voltage was zero. When the gate voltage becomes zero and the body diode is turned on, current flows from the ground to the sense resistor and the body diode of the sense terminal. In this case, the voltage Vsense of the sense terminal is smaller than the turn-on voltage 0.7 of the body diode and its sign is negative (−0.7 <Vsense <0). By using this characteristic, it is possible to detect the reverse recovery point of the drain-source body diode by detecting the time when the voltage (Vsense) of the sense terminal changes from (-) to (+).
    4A to 4C are circuit diagrams and graphs illustrating the operation in the case of applying the one-shot gate drive circuit using the sensepet of the present invention to the voltage-type pseudo-resonant converter for each mode.
    Figure 4a shows the operation mode 1 of the voltage-type pseudo-resonant converter, in the mode 1 is a section in which energy is stored in the inductance of the transformer. At this time, the stored energy is transferred while the diode of the secondary side is turned on in mode 2 (FIG. 4B). Mode 2 shows the flow of current when the diode on the secondary side is turned on and energy on the primary side is transferred to the secondary side. At this time, the voltage of the sense terminal becomes (-). The output of the comparator is low, and the one shot circuit does not operate. When all energy transfer is complete, the diode current becomes zero and the voltage across the diode becomes zero. This is the end of mode 2. The moment the transition from mode 2 to mode 3 reverse recovery of the diode begins (Figure 4c). At this point, the voltage at the sense terminal of the sensepet changes to (+), and the output signal of the next comparator is applied high, and this signal is input to the one shot circuit. In one shot circuit, the gate signal for the set reverse recovery time is applied to induce the current of the inductor to the desired size, so that the optimal value of the switch voltage can be lowered than when using a general diode. In addition, switching losses can be greatly reduced by turning on the sensepet during diode reverse recovery. Looking at the switching loss on the right side of the figure, it can be seen that there is a big difference between the loss in case of reverse recovery of the diode and the loss in the case of flowing through the sensepet.
    The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.
    As described above, according to the present invention, if the current is allowed to flow through the sense pipe without going through the diode during reverse recovery of the diode, the reverse recovery time can be arbitrarily adjusted as well as switching loss occurring during the reverse recovery time. It can greatly reduce.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] In a voltage-type pseudo resonance converter having a primary side and a secondary side,
    A sense pet on the secondary side for sensing a zero voltage point between a drain and a source using a sensing terminal;
    A sense resistor for maintaining a voltage of the sense terminal of the sense pet;
    A comparator configured to drive a one-shot circuit by comparing the voltage of the sense terminal of the sense pet with a ground voltage; And
    And a one shot circuit for adjusting a turn-on time of the sense pet.
    [2" claim-type="Currently amended] The one-shot gate drive circuit of claim 1, wherein the comparator causes a current to flow through a sensepet by the one-shot circuit during the reverse recovery period of the diode after sensing the zero voltage point.
    [3" claim-type="Currently amended] The one-shot gate drive circuit of claim 1, wherein a bias is applied to a sensing terminal of the sensepet to sense a zero voltage point between the drain and the source through a voltage change of the sensing terminal.
    [4" claim-type="Currently amended] The one-shot gate according to claim 1, wherein the voltage-type pseudo-resonant converter increases the initial current value of the primary side inductor at turn-on to further lower the minimum value of the voltage at turn-on of the primary side switch. Drive circuit.
    类似技术:
    公开号 | 公开日 | 专利标题
    JP6634089B2|2020-01-22|Soft switching flyback converter
    DE102016112958A1|2017-01-19|System and method for operating a switching transistor
    US9112498B2|2015-08-18|Dynamic MOSFET gate drivers
    US5590032A|1996-12-31|Self-synchronized drive circuit for a synchronous rectifier in a clamped-mode power converter
    US8917068B2|2014-12-23|Quasi-resonant controlling and driving circuit and method for a flyback converter
    US6304473B1|2001-10-16|Operating a power converter at optimal efficiency
    KR100825536B1|2008-04-25|Adaptive delay control circuit for switched mode power supply
    JP4515683B2|2010-08-04|External drive system for synchronous rectification
    US7236041B2|2007-06-26|Isolated gate driver circuit for power switching devices
    US8203377B2|2012-06-19|Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
    US6396250B1|2002-05-28|Control method to reduce body diode conduction and reverse recovery losses
    US6037720A|2000-03-14|Level shifter
    JP2015062335A|2015-04-02|Method and apparatus for extending zero-voltage switching range in dc/dc converter
    JP4574930B2|2010-11-04|Resonant gate driver for synchronous rectifier
    EP1490958B1|2011-11-02|Method and apparatus for controlling a synchronous rectifier
    EP1356575B1|2007-05-02|Isolated drive circuitry used in switch-mode power converters
    US5305191A|1994-04-19|Drive circuit for zero-voltage switching power converter with controlled power switch turn-on
    US6778417B2|2004-08-17|Electric-power supplying devices switching between a synchronous rectification and a diode rectification by gradually altering a switching pulse
    JP2845188B2|1999-01-13|DC-DC converter
    US5268830A|1993-12-07|Drive circuit for power switches of a zero-voltage switching power converter
    US6433491B2|2002-08-13|Energy converter having a control circuit
    US6496392B2|2002-12-17|Dissipative clamping of an electrical circuit with a clamp voltage varied in response to an input voltage
    EP0929931B1|2004-03-10|Power supply using synchronous rectification
    JP3212924B2|2001-09-25|Switching control method of DI / DT and DV / DT of MOS gate power transistor
    JP4155211B2|2008-09-24|Switching power supply
    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-10-13|Application filed by 윤종용, 삼성전자 주식회사
    1997-10-13|Priority to KR1019970052344A
    1999-05-06|Publication of KR19990031563A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970052344A|KR19990031563A|1997-10-13|1997-10-13|One Shot Gate Drive Circuit Using Sensepet|
    [返回顶部]